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SIMOX Wafer Specifications


 
Standard/Full Dose
SIMOX
ADVANTOX® 170
ADVANTOX® 120
ADVANTOX® 50
BOX
3750Å
1700Å
1150Å
~500Å
*Si
1900±50Å
2200±50Å
1800±50Å
~500Å
pinhole density
0.1cm²
0.1cm²
0.2cm²
0.2cm²
Metallics
<1E11 atm/cm²
<1E11 atm/cm²
<1E11 atm/cm²
<1E11 atm/cm²
 
p-type SEMI Std <100> 10-20 ohm cm
     
* Si can be thinned to 500Å+/-50Å or have an epitaxial layer grown to meet various silicon requirements that are <1000Å or >2200Å.

Ibis Wafer Specifications

 
4"
6"
8"
available upon request
Type
P-type/N-type
P-type/N-type
P-type/N-type
   
Doping
Boron/Phosphorus
Boron/Phosphorus
Boron/Phosphorus
   
Orientation
<100> ± 1.0°
<100> ± 5.0°
<100> ± 1.0°
   
Resistivity
10-20 ohm cm
10-20 ohm cm
14-22 ohm cm
<111><110>
Thickness (SEMI std)
525mm ± 20mm
675mm ± 20mm
725mm ± 20mm
>1 Ohm cm
Total Thickness Variation
10mm MAX
10mm MAX
7mm MAX
 
Flat location and orientation
SEMI Std M100
SEMI Std M100
(NO SECONDARY FLAT)
NOTCHED
 
Bow
40µm MAX
30µm MAX
40µm MAX
 
Warp
40µm MAX
30µm MAX
50µm MAX
 

 
Please email us to receive more information

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Ibis stocks wafers that are SEMI standard, <100>, 10-20 ohm cm, P-type, but can process other specifications if wafers are supplied by customer.

Please see SIMOX SOI specifications for more information.
Wafers
Ibis Supplied    Customer Supplied 
Wafer Size
100mm    150mm   200mm
Quantity

<100   100-1000  >1000

Product
Standard Dose 
ADVANTOX® 170
ADVANTOX® 120
ADVANTOX®  50
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