|
SIMOX Wafer Specifications
|
Standard/Full
Dose
SIMOX
|
ADVANTOX®
170
|
ADVANTOX®
120
|
ADVANTOX®
50
|
BOX
|
3750Å
|
1700Å
|
1150Å
|
~500Å
|
*Si
|
1900±50Å
|
2200±50Å
|
1800±50Å
|
~500Å
|
pinhole
density
|
0.1cm²
|
0.1cm²
|
0.2cm²
|
0.2cm²
|
Metallics
|
<1E11
atm/cm²
|
<1E11
atm/cm²
|
<1E11
atm/cm²
|
<1E11
atm/cm²
|
|
p-type
SEMI Std <100> 10-20 ohm cm
|
|
|
|
*
Si can be thinned to 500Å+/-50Å
or have an epitaxial layer grown to meet various silicon requirements that are
<1000Å
or >2200Å.
|
Ibis
Wafer Specifications
|
4"
|
6"
|
8"
|
available
upon request
|
Type
|
P-type/N-type
|
P-type/N-type
|
P-type/N-type
|
|
Doping
|
Boron/Phosphorus
|
Boron/Phosphorus
|
Boron/Phosphorus
|
|
Orientation
|
<100>
± 1.0°
|
<100>
± 5.0°
|
<100>
± 1.0°
|
|
Resistivity
|
10-20
ohm cm
|
10-20
ohm cm
|
14-22
ohm cm
|
<111><110>
|
Thickness
(SEMI std)
|
525mm
± 20mm
|
675mm
± 20mm
|
725mm
± 20mm
|
>1
Ohm cm
|
Total
Thickness Variation
|
10mm
MAX
|
10mm
MAX
|
7mm
MAX
|
|
Flat
location and orientation
|
SEMI
Std M100
|
SEMI
Std M100
(NO SECONDARY FLAT)
|
NOTCHED
|
|
Bow
|
40µm
MAX
|
30µm
MAX
|
40µm
MAX
|
|
Warp
|
40µm
MAX
|
30µm
MAX
|
50µm
MAX
|
|
back
to top
|